In this work, Raman scattering equation, presented by Irmer et. al. (1997), was fitted to Raman scattering spectra of heavily doped GaAs:Be at room temperature. The data of plasma frequency were obtained, and the carrier concentration can be calculated. It is correspondent with the carrier concentration determined by Hall measurement as p[subscript Raman] = (1.03±0.05)p[subscript Hall], Thus, it is possible to measure the carrier concentration of heavily doped semiconductor by Raman scattering. Indirect electron transition of heavily doped semiconductor is also fitted to the photoluminescence spectra of heavily doped GaAs:C at room temperature. The results show that energy band gap and Fermi energy decrease with increasing carrier concentration as ∆Eg=(1.76±0.04eV.cm)x10ˉ⁸p[superscript 1/3] and EF=(7.80±0.38eV.cm2)x10ˉ¹⁵p[superscript 2/3]. The carrier concentration can be calculated and correspond with the Hall-measurements carrier concentration as p[subscript pl] = (1.00±0.06)p[subscript Hall]. Thus, it is possible to measure the carrier concentration of heavily doped semiconductor by photoluminescence. Photoluminescence spectra of heavily doped GaAs:Be at room temperature can not interpret at first because of diffraction at the filter of the instrument. Therefore, the Fourier smooth spectrum is used. By the way, the output spectra are fitted with indirect electron transition equation. The results are significantly different from GaAs, which are doped with another atom. At this moment, the possible explanation is not yet obtained.