Silicon carbide is one of non-oxide ceramic materials which have been widely used in many in industrial applications due to its excellent mechanical properties, high thermal, and electrical conductivity, high thermal shock resistance, excellent chemical oxidation resistance, and high strength and stiffness. There are many methods used to fabricate silicon carbide such as carbothermal reduction process and sol-gel process. However, synthesis of silicon carbide is usually done by a process which consumes lots of energy for extended period of time. In this research, silicon carbide nanoparticles were synthesized by arc discharge process, which could produce the product within seconds. The anode, which was a carbon rod, was axially drilled and filled with silicon source, i.e. silicon monoxide powder. It was raised into a cylindrical-shaped cathode, which was also made from carbon rod. Both the anode and cathode were submerged in water. Upon the supply of direct current in the range of c.a. 80 A, arc discharge was induced. Nitrogen gas was continuously supplied through the cathode to carry the product from the arc-discharging zone to water. The effect of parameters .i.e., arc current, feeding gas component, gas flow rate and anode velocity were investigated to explain the mechanism of synthesis of silicon carbide by arc-discharge process.
