Thermoelectric properties of iron silicide synthesized by thermal method / Aparporn Sakulkalavek = สมบัติเทอร์มออิเล็กทริกของไอร์ออนซิลิไซด์ที่สังเคราะห์โดยกระบวนการความร้อน
The Fe-Si compound with atomic ratio Fe:Si = 1:2.0, 1:2.3 and 1:2.5 were synthesized by thermal method. All samples were annealed at 820 ℃ or 950℃ for 3,6 and 12 h in Ar atmosphere. Longer anneal time increased Seebeck coefficient but ε-FeSi phase still presented in FeSi [subscript 2.0] and FeSi [subscript 2.3] sample. Based on standard deviation of Seebeck coefficient measured by hot-probe technique, it would imply that non-homogenity in FeSi [subscript 2.0] and FeSi [subscript 2.3] samples was higher than that in FeSi [subscript 2.5] sample. Influences of excess Si on thermoelectric properties were investigated. It was shown that the Seebeck coefficient increased and thermal conductivity decreased due to the phonon and carriers scattering by exess Si, especially at lower temperatures than 400℃. Thermoelectric properties, Seebeck coefficient, thermal conductivity and electrical conductivity were measured as a function of temperature (30℃ < T<700℃). The dispersion of excess Si in FeSi [subscript 2.3] and FeSi [subscript 2.5] samples increased the Seebeck coefficient and decreased the thermal conductivity while the present of metallic ε-phase in in FeSi [subscript 2.0] and in FeSi [subscript 2.3] samples increased the electrical conductivity. The highest dimensionless figure of merit ZT for in FeSi [subscript 2.0] and in FeSi [subscript 2.5] were annealed at 950℃ for 12 h were 0.44, 0.48 and 0.20 at 700℃, respectively.
