การออกแบบและการพัฒนาหัววัดรังสีเอกซ์ทรีมอัลตราไวโอเลตที่ใช้กระจกซิลิคอนโมลิบดีนัม / กัลยา ธนาสินธ์ = Design and development of EUV detector using silicon molybdenum mirror / Kanlaya Thanasin
This thesis describes the development of Extreme Ultraviolet (EUV) radiation detector. The investigation prioritized on the performance of the detector especially its fast response to photon at wavelength of 13.5 nm thus the photoelectric effect principle is used to devise such a detector. Metals with suitable work function were investigated such that the metal with best response was identified. The detector performance was investigated at Siam Photon Laboratory Synchrotron Light Research Institute (Public Organization) where Photoemission Spectroscopy (PES) beam line can provide EUV radiation with known wavelength and intensity through angle-resolved photoemission spectroscopy. The efficiencies of the detector were measured in comparison to a commercialized diode detector SXUV HS5 Si/Zr which has a detectable window around 13.5 nm. It was found that silver (Ag) was the best material to make such a detector where the work function is 4.73 eV. When the detector was used to measure the radiation with wavelength of 13.5 nm, it was shown that the detector can perform as well as the SXUV HS5 Si/Zr. In order to increase the detection efficiency, the detector can be used in cooperation with silicon molybdenum mirror (Si/Mo) for better wavelength selectivity. The efficiencies of the detector used silver metal detecting photons of 12 nm,13.5 nm and 15 nm were 1.7%, 2.47% and 1.38% respectively. In comparison with SXUV HS5 Si/Zr, the efficiency at 13.5 nm was 3.74%. It can be concluded that the proposed EUV detector has a potential to be further used in semiconductor industry development as well as measurement of EUV radiation (5-50 nm) in other applications that are comparable with other widely used solid state radiation detectors.
